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Si6975DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 12
R DS(on) ( Ω )
0.027 at V GS = - 4.5 V
0.036 at V GS = - 2.5 V
I D (A)
- 5.1
- 4.5
? Halogen-free
? TrenchFET ? Power MOSFETs: 1.8 V Rated
RoHS
COMPLIANT
0.046 at V GS = - 1.8 V
- 3.9
S 1
S 2
TSSOP-8
G 1
G 2
D 1
1
8
D 2
S 1
S 1
G 1
2
3
4
Si6975DQ
7
6
5
S 2
S 2
G 2
Top View
Ordering Information: Si6975DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
- 12
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current (10 μs Pulse Width)
T A = 25 °C
T A = 70 °C
I D
I DM
- 5.1
- 4.1
- 30
- 4.3
- 3.5
A
Continuous Source Current (Diode Conduction) a
I S
- 1.0
- 0.7
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.14
0.73
- 55 to 150
0.83
0.53
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
86
124
52
110
150
65
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71319
S-81221-Rev. B, 02-Jun-08
www.vishay.com
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